发明名称 METHOD AND DEVICE FOR LASER BEAM MARKING OF SEMICONDUCTOR WAFER
摘要 <p>PROBLEM TO BE SOLVED: To provide a method and a device for laser beam marking of a semiconductor wafer by which burrs on dot periphery, a thermal effect and marking dusts in the inside can be minimized and dots having a flat bottom can be easily formed. SOLUTION: These method and device are characterized in that, after reshaping a laser beam 1 emitted from a laser beam oscillator 2 to a prescribed beam diameter by a beam expander 3, the periphery of the laser beam is shielded by a mask type aperture 4 and a prescribed region of a beam center part is attenuated by prescribed transmission.</p>
申请公布号 JP2001138076(A) 申请公布日期 2001.05.22
申请号 JP19990324758 申请日期 1999.11.15
申请人 NEC CORP 发明人 ONOMA KAZUYA
分类号 B23K26/00;B23K26/06;B23K26/073;B23K101/40;H01L21/02;(IPC1-7):B23K26/00 主分类号 B23K26/00
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