| 摘要 |
PROBLEM TO BE SOLVED: To deposit an optical thin film such as a metallic fluoride film low in absorption in a wide range to an ultraviolet wavelength region. SOLUTION: The space between a target T and a substrate W in a vacuum tank 10 is provided with a nonconductive mesh 16, and, moreover, a shield 17 surrounding the side direction of plasma P generated in the vicinity of the target T is applied with a DC bias to deviate the kinetic directions of secondary electrons in the plasma P and the negative ions of gaseous fluorine or the like fed from a gas shower head 13 from the substrate W, by which damage given to an optical thin film in the process of film deposition is reduced. |
