| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist material sensitive to high energy beams, excellent in sensitivity, resolution and plasma etching resistance, giving a resist pattern excellent in heat resistance and reproducibility, usable as a resist material having small absorption particularly at the exposure wavelength of Kr2, F2, ArF or KrF excimer laser light, capable of easily forming a minute pattern perpendicular to a substrate and suitable for use as a minute pattern forming material for the production of a very large scale integrated circuit. SOLUTION: The high molecular compound contains repeating units of formula 1 (where at least one of R1-R3 is F or trifluoromethyl, the remainders are each H or a 1-20C linear, branched or cyclic alkyl; R4 is an acid labile group; 0 <k<=1, 0<=m<1 and k+m=1). |
