| 摘要 |
PROBLEM TO BE SOLVED: To reduce the parasitic capacitance between the gate and the drain in a channel layer without changing the material of an insulation film and increasing the distance between electrodes. SOLUTION: A source region 12, a drain region 13, and a channel region 14 are provided on a compound semiconductor substrate 11. Also, an insulation film 15 is provided on the compound semiconductor substrate 11, and a gate electrode 16, a source electrode 17, and a drain electrode 18 are provided through the insulation film 15. Then, edge parts 17A and 18A facing the gate electrode 16 of the source electrode 17 and the drain electrode 18 are formed in a corrugated shape with a saw-tooth (notched) recesses and projections in the direction of the gate electrode 16, thus reducing parasitic capacitance between the gate and the drain in the channel region 14 without changing the material of the insulation film and without increasing the distance between the electrodes.
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