| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance junction strength for an upper surface of a columnar type electrode of the surface processing layer, for preventing oxidation to be formed on the surface of the column type electrode in a semiconductor device called a CSP. SOLUTION: Re-wiring 31 is formed toward a prescribed area of the upper surface on an insulation film 23, from the upper surface of a connection pad 22 on a wafer 21 and a columnar type electrode 29 is formed on the upper surface of the end portion of the re-wiring 31. Moreover, a latticetype auxiliary wiring 32 is formed to the area corresponding to a dicing street 26. In this case, the auxiliary wiring 32 is connected with the re-wiring 31 via the connection line 33. After a sealing film 34 is formed, a surface-processing layer 35 for preventing oxidation is formed on the upper surface of the column type electrode 2, by conducting electrolytic plaing using the auxiliary wiring 32, connection line 33 and re-wiring 31 as the plating current path. The junction strength for the upper surface of the columnar type electrode 29 of this surface processing layer 35 can be enhanced, in comparison to that when the surface processing layer 35 is formed only with the non-electrolytic plating.</p> |
