| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem such that a high frequency, multi-pin semiconductor element can not be effectively laminated and mounted and an ultra-thin, miniaturized semiconductor device of high density can not be achieved in conventional QFP, QFN type semiconductor devices. SOLUTION: The device has a structure where a first semiconductor element 12 is mounted by a bump electrode 13 on a support member 11 with an outer terminal 21 with an insulation sheet interposed, a second semiconductor element 15 is laminated and mounted in the backside of the first semiconductor element 12 and is connected to an inner lead 17 by a metallic fine line 18, and one-sided sealing is carried out by sealing resin 19 for exposing the bottom surface of the support member 11 and the bottom surface and the outer side surface of the inner lead 17. AN area-like external terminal is arranged in a package bottom surface by an outer terminal 20, in the bottom surface of the inner lead and the outer terminal 21 of the support member 11. Thereby, an ultra-thin and compact semiconductor device of high density can be realized. |
