| 摘要 |
PROBLEM TO BE SOLVED: To provide a lamp annealing apparatus capable of accurately measuring the heat treating temperature of a wafer even when impurities are discharged from the wafer surface. SOLUTION: The apparatus has at least a reactor chamber 2 having a gas inlet and a gas outlet, a wafer support 3 for supporting a wafer in the reactor chamber, an IR lamp 8 for radiating IR on the wafer surface, a reflector 4 for reflecting the IR emitted from the wafer backside, a radiation thermometer 5 for detecting the IR reflected repeatedly between the wafer backside and the reflector, and a quartz shield plate closely contacted to the wafer backside, thereby defining a closed space with the wafer support and the reflector. The quartz shield plate isolates the wafer from the reflector and the radiation thermometer, thereby preventing impurities discharged from the wafer during annealing from re-growing on the reflector and the radiation thermometer.
|
