| 摘要 |
<p>A thin-film piezoelectric device comprises a silicon substrate (1); a dielectric film (21) including a silicon nitride film (16) formed on the silicon substrate (1) and a silicon oxide film (2) formed on the silicon nitride film (16); a lower electrode (3) formed on the dielectric film (21); a piezoelectric film (17) formed on the lower electrode (3); and an upper electrode (5) formed on the piezoelectric film (17). To form a via hole (6), that part of the silicon substrate (1) opposed to the area including the upper electrode (5) is removed from the bottom of the silicon substrate (1) to the interface with the silicon nitride film (16).</p> |
