| 摘要 |
The present invention provides a method for fabricating an EEPROM memory cell having a trench capacitor, having the following steps: formation of a trench (108) in a substrate (101); formation of a buried plate (165) in the substrate region in the vicinity of the lower region of the trench (108); concerted fabrication of a floating gate surrounded by dielectric layers in order to define the EEPROM region; optional recessing of the dielectric layer in order to define DRAM regions. |
