ETCH PROCESS THAT RESISTS NOTCHING AT ELECTRODE BOTTOM

摘要

A semiconductor device is manufactured using a small amount of nitrogen in the gate electrode etch process to minimize notching at the bottom of the electrode. Consistent with one embodiment of the present invention, the gate electrode etch process includes using a plasma-etch and selectively etching into the device layer to form the electrode with its lower sidewalls protected using a relatively small percentage of nitrogen in the plasma gas flow.