发明名称 PLASMA PROCESSING METHOD
摘要 <p>There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil 26 and an auxiliary electromagnetic coil 27 during a preheat and during a thin-film deposition are set to be different from each other to change the shape of an obtained magnetic field so that the magnetic field has a small magnetic flux density although it has higher uniformity during the thin-film deposition whereas the magnetic field has a large magnetic flux density although it has lower uniformity during the preheat. As a result, a substantially uniform plasma is produced in the plane of a wafer W during the thin-film deposition, so that it is possible to carry out a uniform thin-film deposition. On the other hand, during the preheat, a plasma having a larger density than that during the thin-film deposition is produced although the uniformity thereof is lower. Therefore, the heat gain into the wafer W is greater than that during the thin-film deposition, so that it is possible to shorten the preheat time. &lt;IMAGE&gt;</p>
申请公布号 EP1100119(A1) 申请公布日期 2001.05.16
申请号 EP19990957662 申请日期 1999.06.28
申请人 TOKYO ELECTRON LIMITED 发明人 AMANO, HIDEAKI
分类号 C23C16/50;C23C16/40;C23C16/511;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;H01L21/311;H01L21/312;H01L21/314;H01L21/316;H01L21/318;H01L21/3213;H01L21/768;(IPC1-7):H01L21/31 主分类号 C23C16/50
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