摘要 |
<p>There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil 26 and an auxiliary electromagnetic coil 27 during a preheat and during a thin-film deposition are set to be different from each other to change the shape of an obtained magnetic field so that the magnetic field has a small magnetic flux density although it has higher uniformity during the thin-film deposition whereas the magnetic field has a large magnetic flux density although it has lower uniformity during the preheat. As a result, a substantially uniform plasma is produced in the plane of a wafer W during the thin-film deposition, so that it is possible to carry out a uniform thin-film deposition. On the other hand, during the preheat, a plasma having a larger density than that during the thin-film deposition is produced although the uniformity thereof is lower. Therefore, the heat gain into the wafer W is greater than that during the thin-film deposition, so that it is possible to shorten the preheat time. <IMAGE></p> |