发明名称 |
THIN FILM DEPOSITION SYSTEM |
摘要 |
PURPOSE: A thin film deposition system is provided which enables easy controlling of fluid due to scale-up of a wafer diameter, and forms a uniformed thin film by constantly maintaining temperature of a wafer to be deposited at each parts of the wafer. CONSTITUTION: The thin film deposition system comprises a vacuum chamber(20); a block(30) which is installed inside the vacuum chamber(20); a heating means(40) which is installed in the block(30); a nozzle part(50) which is installed in the chamber(20) of the upper part of the block(30) to supply metallic organic material and gas; a gas supply means for supplying gas to the nozzle part(50); an ascent and descent means(70) for ascending or descending the block(30) to adjust between the nozzle part(50) and a wafer(100); an exhaust means(80) comprising two outlets which are symmetrically formed at the chamber(20) on the basis of the center of the block(30); and a heating and cooling means which is installed on the outer circumferential surface of the vacuum chamber(20).
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申请公布号 |
KR100297003(B1) |
申请公布日期 |
2001.05.16 |
申请号 |
KR19980003840 |
申请日期 |
1998.02.10 |
申请人 |
INTEGRATED PROCESS SYSTEMS |
发明人 |
CHOI, WON SEONG;KYUNG, HYEON SU |
分类号 |
C23C16/44;(IPC1-7):C23C16/44 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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