发明名称 THIN FILM DEPOSITION SYSTEM
摘要 PURPOSE: A thin film deposition system is provided which enables easy controlling of fluid due to scale-up of a wafer diameter, and forms a uniformed thin film by constantly maintaining temperature of a wafer to be deposited at each parts of the wafer. CONSTITUTION: The thin film deposition system comprises a vacuum chamber(20); a block(30) which is installed inside the vacuum chamber(20); a heating means(40) which is installed in the block(30); a nozzle part(50) which is installed in the chamber(20) of the upper part of the block(30) to supply metallic organic material and gas; a gas supply means for supplying gas to the nozzle part(50); an ascent and descent means(70) for ascending or descending the block(30) to adjust between the nozzle part(50) and a wafer(100); an exhaust means(80) comprising two outlets which are symmetrically formed at the chamber(20) on the basis of the center of the block(30); and a heating and cooling means which is installed on the outer circumferential surface of the vacuum chamber(20).
申请公布号 KR100297003(B1) 申请公布日期 2001.05.16
申请号 KR19980003840 申请日期 1998.02.10
申请人 INTEGRATED PROCESS SYSTEMS 发明人 CHOI, WON SEONG;KYUNG, HYEON SU
分类号 C23C16/44;(IPC1-7):C23C16/44 主分类号 C23C16/44
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