发明名称 Magnetic element with dual magnetic states and fabrication method thereof
摘要 An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.
申请公布号 US6233172(B1) 申请公布日期 2001.05.15
申请号 US19990464807 申请日期 1999.12.17
申请人 MOTOROLA, INC. 发明人 CHEN EUGENE YOUJUN;SLAUGHTER JON MICHAEL;DURLAM MARK;DEHERRERA MARK;TEHRANI SAIED N.
分类号 G01R33/09;G11B5/39;G11C11/16;H01F10/26;H01F10/32;H01F41/14;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G11C11/15 主分类号 G01R33/09
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