SEMICONDUCTOR MEMORY DEVICE HAVING ARRAY POWER SWITCH TRANSISTORS LOCATED IN SENSE AMP REGION

摘要

PURPOSE: A semiconductor memory device having array power switch transistors located in a sense amp region is provided to improve power noise by reducing line loading related to array power switch transistors, and to increase the sensing speed of bit line pair, and to increase the size of the array power switch transistor. CONSTITUTION: The semiconductor memory device includes: a memory cell array having a plurality of sub cell arrays(12); a plurality of sense amp regions(40) where each sense amp region is arranged between two sub cell arrays which are adjacent along a specific direction; power lines(21,23) passing along the specific direction on the plurality of sub cell arrays and the plurality of sense amp regions; and a plurality of array power switch transistors(43,45) which are located in the sense amp region to supply power from the power lines to sense amps in the sense amp region.