| 摘要 |
PURPOSE: A plasma etcher is provided to prevent a wafer from being damaged by ions irradiated to the wafer, by varying and applying a positive power supply and a negative power supply to positive and negative electrodes, respectively. CONSTITUTION: A wafer(230) is mounted between a positive electrode and a negative electrode. The wafer is etched by using plasma generated by a high voltage. BC(blocking capacitor) provide RF power source of which direct current and a low frequency component are eliminated, to a switch(100). The switch makes a positive power supply and a negative power supply varied and supplied to respective electrodes.
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