METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING ION IMPLANTING PROCESS

摘要

PURPOSE: A method for manufacturing a semiconductor device by using an ion implanting process is provided to easily control a junction depth and to prevent a wafer from being damaged by high energy ion implantation without using high energy ion implantation equipment. CONSTITUTION: Ion implantation processes for forming a well and a channel stop, preventing a punch-through and controlling a threshold voltage are carried out to manufacture a semiconductor device. After a silicon layer is respectively formed between the ion implantation processes, the next ion implantation process is performed. Low energy ion implantation equipment is utilized in the respective ion implantation processes.