| 摘要 |
PURPOSE: To prevent deposition of a copper film and barrier metal in an area near a wafer circumferential edge by positioning a circumferential edge part of a second insulation film outside the circumferential edge part of a first insulation film. CONSTITUTION: After a silicon oxide nitride film 7 is formed all over a wafer by a plasma CVD method, a silicon oxide film 8 is formed. After a photoresist material is applied and dried thereon, exposure and peripheral exposure are carried out and a photoresist 9 is formed. Dry etching is carried out by using the photoresist 9 as a mask, the silicon oxide film 8 is removed by etching, and then the silicon oxide nitride film 7 is removed by etching. A peripheral part 61 of the photoresist 9 is positioned outside the circumferential edge part 60 of the silicon oxide film 3 in this way. |
