| 摘要 |
PURPOSE: A method for manufacturing a dual gate insulating layer of a semiconductor device is provided to simplify a manufacturing process by forming gate insulating layers of thick and thin thickness in an etching process, and to improve a gate oxide integrity(GOI) characteristic by reducing contamination caused by photoresist. CONSTITUTION: An insulating layer(22) of the first thickness is formed on a semiconductor substrate(21). The first region and the second region are defined in the insulating layer, and the first region is masked. Nitrogen ions are implanted into the insulating layer in the exposed second region. A gate insulating layer of the second thickness relatively thinner than the first thickness and a gate insulating layer of the third thickness relatively thinner than the second thickness are formed by a wet-etching process. The first gate electrode is formed on the gate insulating layer of the second thickness. The second gate electrode is formed on the gate insulating layer of the third thickness.
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