发明名称 APPARATUS FOR FORMING LOW PRESSURE IN CHAMBER OF EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
摘要 PURPOSE: An apparatus for forming low pressure in a chamber of equipment for manufacturing a semiconductor is provided to simplify the structure of the apparatus and a control mechanism, by forming a unified controller composed of a pump and a valve which operate to make chamber pressure not greater than a predetermined pressure value approach a target value. CONSTITUTION: A gas line is connected to a process chamber(21). Reaction gas flows in the gas line. A pressure monitoring unit(22) inspects a pressure value inside the process chamber, and converts the pressure value to an electrical signal for transmission. A low pressure inducing part(26) has a low-pressure induction valve(24) and a low-pressure induction pump(25), installed in the gas line. The low pressure inducing part lowers the pressure inside the process chamber to predetermined pressure or less. A low-pressure control part(31) has a low-pressure control pump(30) and a low pressure control valve(29), installed in the gas line. The low-pressure control part operates when the inside pressure becomes lower than the predetermined pressure value, and makes the inside pressure approach a target value. A unified controller(28) controls the pump and valve for controlling pressure of the low-pressure control part. A main controller(23) receives the electrical signal from the pressure-monitoring unit to control the unified controller, and controls the operation of the low pressure inducing part.
申请公布号 KR20010039010(A) 申请公布日期 2001.05.15
申请号 KR19990047215 申请日期 1999.10.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOO, HO SEOK
分类号 H01L21/20;(IPC1-7):H01L21/20 主分类号 H01L21/20
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