发明名称 |
Method of complementary metal-oxide semiconductor |
摘要 |
A method of fabricating a complementary metal-oxide semiconductor. A semiconductor substrate having a first conductive type region and a second conductive type region is provided. A conductive layer is formed on the substrate. A patterned insulating layer is formed on the conductive layer. A first photoresist layer is formed over the substrate to cover the first region. A portion of the conductive layer on the second region is removed until the substrate is exposed using the insulating layer as a hard mask. A first doping process is performed to the substrate using the first photoresist layer as a mask. The first photoresist layer is removed. A second photoresist layer is formed to cover the second region. A portion of the conductive layer in the first region is removed until the substrate is exposed using the insulating layer as a hard mask. A second doping process is performed on the substrate using the second photoresist layer as a mask. The second photoresist layer is removed.
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申请公布号 |
US6232162(B1) |
申请公布日期 |
2001.05.15 |
申请号 |
US19990236932 |
申请日期 |
1999.01.25 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
KAO MING-CHENG |
分类号 |
H01L21/8238;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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