发明名称 Method for fabricating inter-metal dielectric layer
摘要 A method for fabricating an inter-metal dielectric layer. Several conducting wires are formed on a substrate, and openings lie between the adjacent conducting wires. A first dielectric layer fills the openings, and the surface of the first dielectric layer is lower than that of the conducting wires. A spacer is formed on a sidewall of each of the conducting wires. The first dielectric layer is removed to expose the bottom of the spacer. A second dielectric layer is formed to cover the conducting wires.
申请公布号 US6232214(B1) 申请公布日期 2001.05.15
申请号 US19990316475 申请日期 1999.05.21
申请人 UNITED MICROELECTRONICS CORP. 发明人 LEE CLAYMENS;HONG GARY
分类号 H01L21/768;(IPC1-7):H01L21/476 主分类号 H01L21/768
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