发明名称 |
Method for fabricating inter-metal dielectric layer |
摘要 |
A method for fabricating an inter-metal dielectric layer. Several conducting wires are formed on a substrate, and openings lie between the adjacent conducting wires. A first dielectric layer fills the openings, and the surface of the first dielectric layer is lower than that of the conducting wires. A spacer is formed on a sidewall of each of the conducting wires. The first dielectric layer is removed to expose the bottom of the spacer. A second dielectric layer is formed to cover the conducting wires.
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申请公布号 |
US6232214(B1) |
申请公布日期 |
2001.05.15 |
申请号 |
US19990316475 |
申请日期 |
1999.05.21 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LEE CLAYMENS;HONG GARY |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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