| 摘要 |
Dual gate oxide layer thicknesses are achieved by depositing a thin blocking layer on active regions of a semiconductor substrate, such as silicon nitride, oxynitride, or oxide. Selected active regions are nitridated through a patterned photoresist mask formed thereon. The blocking layer protects the substrate from the photoresist mask and enables nitriding, as by ion implantation, plasma exposure, or rapid thermal annealing.
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