发明名称 METHOD FOR PRODUCTION OF PIEZOELECTRIC OR FERROELECTRIC THIN FILM
摘要 PROBLEM TO BE SOLVED: To solve the problem where it is difficult to control the crystal orienta tion when producing through a post annealing technique typified by a sol-gel method a piezoelectric or ferroelectric thin film. SOLUTION: In a process for drying a raw material solution, substrate heating is conducted under a condition represented by the formula 350<=T<=405t-5t (wherein T deg.C is the highest temperature in heating the substrate; and (t) min is >0 and a heating time at T deg.C).
申请公布号 JP2001130958(A) 申请公布日期 2001.05.15
申请号 JP19990312932 申请日期 1999.11.02
申请人 SEIKO EPSON CORP 发明人 TAMURA HIROAKI;HASEGAWA KAZUMASA;HAMADA YASUAKI
分类号 H01L41/39;B01J19/00;C03C17/25;C04B35/49;H01L41/317;H01L41/43 主分类号 H01L41/39
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