| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a relatively thin gate oxide layer as compared with a conventional technology by using nitrogen ion implantation and N2O or NO gas, and to form the gate oxide layer having a superior characteristic by increasing the density inside the gate oxide layer without increasing the density of nitrogen ions on a semiconductor substrate. CONSTITUTION: After an isolation region is formed on a semiconductor substrate(21) and an active region is defined, an oxide layer is formed on the active region. Nitrogen ions are implanted into the surface of the semiconductor substrate. The oxide layer is etched, and a gate oxide layer(25) is formed on a region to which the nitrogen ions are implanted, by using N2O or NO gas. After a gate electrode material and a cap insulating layer(27) are formed on the resultant structure having the gate oxide layer, a gate patterning process is performed to form a gate. Low-density impurity ions are implanted into the semiconductor substrate having the gate. An insulating layer is deposited on the resultant structure in which the low-density impurity ions are implanted, and is selectively etched to form a gate sidewall(29). A source/drain ion implantation is performed.
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