METHOD FOR ETCHING LANDING PAD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching a landing pad is to improve an etch selection rate on a lower insulating layer of the landing pad. CONSTITUTION: A landing pad(118a,118b) is connected to an active region formed between gate electrodes provided as a word line. The landing pad connected to a source region serves to reduce an aspect ratio of a buried contact hole for connecting a storage node electrode and the source region. The landing pad connected to a drain region serves to reduce an aspect ratio of a bit line contact hole for connecting a bit line and the drain region. A thermal oxide film is deposited on a substrate with the gate electrode formed, and the first photoresist pattern is formed on the substrate. A doped polysilicon film is deposited on a substrate to form a pad conductive layer, and the second photoresist pattern defining a landing pad region is formed on the pad conductive layer. The pad conductive layer is etched using the second photoresist pattern as a mask to form the landing pads.