METHOD FOR MANUFACTURING TRENCH-TYPE ISOLATION LAYER USING HYDROGEN FLOW

摘要

PURPOSE: A method for manufacturing a trench-type isolation layer using hydrogen flow is provided to form the trench-type isolation layer without a void, by making a bottom of a trench filled with polysilicon so that the depth of the trench is lowered and the aspect ration of the trench is decreased. CONSTITUTION: A substrate(10) is separated into a cell region(CA) and a peripheral circuit region(PA). The respective regions are separated into an active region and a field region. A trench is formed in the field region. An insulating layer is formed on the entire surface of the substrate exposed through the trench. A part of the trench having the insulating layer is firstly buried. The buried material layer is flowed. The trench is secondly buried.