发明名称 Modular chemical abatement system and method for semiconductor manufacturing
摘要 <p>A falling film plasma reactor (FFPR) provides a number of benefits for the treatment of process gases. The falling film plasma reactor uses high voltage alternating current or pulsed direct current which is applied to radially separated electrodes to thereby create a dielectric breakdown of the process gas that is flowing within the large radial gap between the two electrodes. Typical plasma reactors often utilize fixed dielectric construction which can result in potential failure of the device by arcing between the electrodes as portions of the dielectric fail. Such failures are prevented by using a dielectric liquid that constantly flows over the electrodes, or over a fixed dielectric barrier over the electrodes.</p>
申请公布号 AU1451901(A) 申请公布日期 2001.05.14
申请号 AU20010014519 申请日期 2000.10.31
申请人 ROBERT R. MOORE;JAMES D. GETTY 发明人 ROBERT E. MOORE;JAMES D. GETTY
分类号 B01D53/32;B01D53/75;B01J6/00;B01J10/02;B01J19/08;C10B53/00;F23J15/00;H01J37/32;H01L21/00;H05H1/24 主分类号 B01D53/32
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