| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a TFT with high reliability at a low cost in which no parasitic channel is present on the side face of a semiconductor pattern of a TFT in a TFT-LCD with a built-in driving circuit to be formed on a glass substrate. SOLUTION: Elements are separated by using low temperature plasma oxidation to form such a structure that a gate insulating film is not in contact with the side face of the semiconductor pattern of a TFT so as to prevent a parasitic channel on the side face of the semiconductor pattern. By this method, since the side face of the semiconductor pattern is not in contact with the gate insulating film, no parasitic channel is formed on the side face. Moreover, no step is formed in the end of the semiconductor pattern so that a dense and high- quality insulating film which is inferior in the step coverage can be used, and this improves the reliability.</p> |
