发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the chip area of a semiconductor device and to shorten the development period of the semiconductor device. SOLUTION: A phase compensation circuit 12A where an NMOS transistor(TR) 15 and a capacitor 13 are connected in series is connected to a negative feedback amplifier circuit where a feedback circuit 11 is connected to an operational amplifier 10. The resistance of the NMOS TR 15 depends on a bias circuit 16 that supplies a bias voltage VB corresponding to selection control signals SC1-SCn to the gate of the NMOS TR 15. A semiconductor device prototype provided with a feedback amplifier circuit with a phase compensation circuit as described above is built, the feedback amplifier circuit equipped with the phase compensation circuit of the semiconductor device is in operation to decide the value of the selection control signal and the semiconductor device whose selection control signal is set to the decided value is mass-produced.
申请公布号 JP2001127558(A) 申请公布日期 2001.05.11
申请号 JP19990306377 申请日期 1999.10.28
申请人 FUJITSU LTD;TOSHIBA CORP 发明人 TAKEUCHI ATSUSHI;ETO SATOSHI;WADA MASAHARU
分类号 H03F3/45;H03F1/34;(IPC1-7):H03F1/34 主分类号 H03F3/45
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