| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor integrated circuit device which has a strength against dielectric breakdown. SOLUTION: In a semiconductor integrated circuit device 10, signals are sent and received among a plurality of internal circuits 34 and 54 which have different power lines 38+39 and 58+59, when protecting circuits 70 and 80 are arranged between the power lines. The protecting circuits are separated into heterogeneous regions of p-type and n-type (71+72 and 81+82). As a result, cooperation of the elements having different characteristics enables the proper protection from various kinds of surge noises and facilitated the layout design. An inter-block protecting circuit if formed where a p-type region and an n-type region are close (32+51, 31+52), thereby shortening the wiring and lightening a burden of design such as trailing of wirings. Further, the inter-block protecting circuit is formed easily by utilizing annular regions 31, 32, 51 and 52 for input/ output circuits.
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