| 摘要 |
PROBLEM TO BE SOLVED: To control the counter breakdown voltage of a P-N junction part. SOLUTION: On a semiconductor substrate 1 of silicon or the like, an N-type semiconductor 2 and a P-type semiconductor 3 having a junction part are formed, on which an insulating layer 4 composed of silicon dioxide or the like is formed. On the insulating layer 4, a conductive layer 5 is formed, on which an insulating layer 6 is formed. In the insulating layer 6, a conductive part 7 which is composed of tungsten or the like and abuts against the conductive layer 5 is formed. By adjusting a voltage which is applied tot he conductive part 7 through a lead 8, the counter breakdown voltage of the P-N junction part can be controlled.
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