| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element where the AlGaInP crystal of good quality, which is a shorter wavelength light emitting element material, is formed on an inexpensive Si substrate with high mass-productivity. SOLUTION: In a semiconductor light emitting element, a buffer layer is installed on a silicon substrate and a p-AlGaInP layer and an n-AlGaInP layer are installed. The mutual layer of a first GaAs layer, an InGaAs layer, a second GaAs layer, an InxGa1-xP layer and an InyGa1-yP layer (x>y) or the mutual layer of an InxAl1-xP layer and an InyAl1-yP layer (x>y) is installed as the buffer layer. |
