IMAGER WITH REDUCED FET PHOTORESPONSE AND HIGH INTEGRITY CONTACT VIA

摘要

A light block material disposed over the photosensitive region (250) of a switching device (130) (e.g., TFT) of a radiation imager (10) is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device (130) and being absorbed. Cross-talk and noise in the imager (10) are thereby reduced. Also, non-linear pixel response and spurious signals passing to readout electronics are avoided. Optionally, opaque caps (198) comprising the same light block material may be included in the imager structure. The caps (198) cover contact vias (21) filled with a common electrode (180) and located in the contact finger (20) region of the imager. The integrity of the filled vias (21) is thereby maintained during subsequent processing. Also disclosed is a radiation imager (10) containing these structures.