| 摘要 |
<p>Source and drain regions of a field-effect transistor with a channel region between them are formed on a semiconductor substrate. A first gate electrode having a gate length shorter than the channel length is formed on insulating film deposited over the semiconductor substrate. The first gate electrode is covered with ferroelectric film, both sides of which are in contact with the insulating film. A second gate electrode is formed to cover the ferroelectric film.</p> |
