发明名称 |
Plasma etching method using low ionization potential gas |
摘要 |
An etching method for forming an opening includes providing a substrate assembly having a surface and an oxide layer thereon. A patterned mask layer is provided over the oxide layer exposing a portion of the oxide layer. A plasma including one or more of CxHyFz+ ions and CxFz+ ions and further including xenon or krypton ions is used to etch the oxide layer at the exposed portion to define the opening in the oxide layer while simultaneously depositing a polymeric residue on a surface defining the opening. The etching is continued until the opening in the oxide layer is selectively etched to the surface of the substrate assembly.
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申请公布号 |
US6228775(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19980028610 |
申请日期 |
1998.02.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
COBURN JOHN W.;DONOHOE KEVIN G. |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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