| 摘要 |
In manufacturing a semiconductor device, an amorphous silicon layer with a predetermined thickness to be electrically connected to a silicon substrate is formed on a silicon oxide film formed on the silicon substrate. Nuclei are formed on the surface of the amorphous silicon layer by irradiation of a predetermined material while the amorphous silicon layer is annealed at the first temperature. Convexities are formed on the surface of the amorphous silicon layer using the nuclei as centers while the amorphous silicon layer having the nuclei is annealed at the second temperature lower than the first temperature.
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