发明名称 |
MOS field effect transistor and its manufacturing method |
摘要 |
The present invention provides novel structures of MOS field effect transistor which operate with high speed and low power consumption. This has been achieved through providing epitaxial growth layers on a substrate of high impurity doping concentration in which the thickness of epitaxial growth layers is controlled with a degree of accuracy on the order of a single atom layer.
|
申请公布号 |
US6229188(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19950538980 |
申请日期 |
1995.10.05 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
AOKI KENJI;TAKADA RYOJI |
分类号 |
H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|