LINEAR ANNEALING METHOD FOR DIRECTLY BONDING SILICON SUBSTRATE AND APPARATUS USING THE SAME

摘要

PURPOSE: A linear annealing method for directly bonding a silicon substrate is to provide a clean junction surface at a low temperature of 500 deg.C in using a silicon substrate junction in various kinds of semiconductor devices. CONSTITUTION: A heat source(12) is transferred from one end of a silicon substrate to the other end of the silicon substrate at a uniform speed. A high temperature band is formed from on end of the substrate while a temperature gradient is formed in a direction the heat source moves. A non-junction region in a junction boundary is eliminated by difference of an interval of the junction boundary manufactured by a difference of temperature.