发明名称 CHEMICAL AND MECHANICAL POLISHING SLURRY
摘要 PURPOSE: Provided is a chemical and mechanical polishing slurry, which prevents erosion phenomenon by controlling the amount of an abrasive so as to remove selective ratio to metal layers. CONSTITUTION: The chemical and mechanical polishing slurry is characterized by containing i) aqueous medium; ii) 1-1.5wt% of one abrasive selected from silica, alumina and ceria; iii) 0.01-10wt% of a catalyst oxidizer such as potassium peri cyanide; and iv) 0.01-10wt% of one main oxidizer selected from benzoyl peroxide, calcium peroxide, barium peroxide and sodium peroxide.
申请公布号 KR20010037315(A) 申请公布日期 2001.05.07
申请号 KR19990044756 申请日期 1999.10.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JONG WON;YOON, BO EON
分类号 C09K3/14 主分类号 C09K3/14
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