发明名称 |
CHEMICAL AND MECHANICAL POLISHING SLURRY |
摘要 |
PURPOSE: Provided is a chemical and mechanical polishing slurry, which prevents erosion phenomenon by controlling the amount of an abrasive so as to remove selective ratio to metal layers. CONSTITUTION: The chemical and mechanical polishing slurry is characterized by containing i) aqueous medium; ii) 1-1.5wt% of one abrasive selected from silica, alumina and ceria; iii) 0.01-10wt% of a catalyst oxidizer such as potassium peri cyanide; and iv) 0.01-10wt% of one main oxidizer selected from benzoyl peroxide, calcium peroxide, barium peroxide and sodium peroxide. |
申请公布号 |
KR20010037315(A) |
申请公布日期 |
2001.05.07 |
申请号 |
KR19990044756 |
申请日期 |
1999.10.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JONG WON;YOON, BO EON |
分类号 |
C09K3/14 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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