METHOD OF FORMING METAL FILM BY USING ELECTROPLATING

摘要

PURPOSE: A metal film forming method by using electroplating is provided to prevent voids within a contact hole by restricting seed layer from being melted by electrolyte. CONSTITUTION: An insulating film(24) is formed on a substrate(22). The insulating film(24) is etched to form a contact hole exposing a portion of the semiconductor substrate(22). TaN is deposited through CVD on the substrate(22) including the contact hole to form a barrier layer(26). A thin copper film is deposited on the barrier layer through PVD or CVD to form a seed layer(28). The substrate is loaded into a chamber, and current is applied between an anode and a cathode. The substrate is immerged into an electrolyte. A copper film(30) is deposited on the seed layer(28). Applying current is stopped and the substrate(22) is taken out of the electrolyte and unloaded from the chamber.