| 摘要 |
PURPOSE: A method for forming a non-volatile semiconductor memory device having a minute pattern of a floating gate is provided to enhance productivity and quality by suppressing the production of particles. CONSTITUTION: In the method, after the first polysilicon layer(24) is formed over a device isolation region, a buffer layer(32) and an anti-reflective layer(25) are formed in sequence on the first polysilicon layer(24). In particular, the buffer layer(32) uses a silicon nitride layer having a deposition temperature substantially equal to that of the polysilicon layer(24). A photoresist pattern is then formed on the anti-reflective layer(25), and the underlying layers(24,32,25) are etched through the photoresist pattern. Thereafter, the anti-reflective layer(25) is removed, and the second polysilicon layer is formed overall. The second polysilicon layer is then removed but remaining a spacer on a sidewall of the first polysilicon layer(24). After that, the buffer layer(32) is removed, and the minute pattern of the floating gate is obtained.
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