| 摘要 |
A resist pattern for formation of diffraction grating is formed on a semiconductor substrate so that the area of each aperture of diffraction grating increases gradually toward the end of diffraction grating formation region, after which etching is conducted to produce a diffraction grating substrate. On the diffraction grating substrate are formed a guide layer, an active layer and a clad layer, whereby a semiconductor laser partially having a diffraction grating is produced.
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