NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A non-volatile memory device and a method for manufacturing the same are provided to improve the program efficiency of a memory device by generating thermoelectrons from a source region. CONSTITUTION: A gate insulating layer(22) is formed on a substrate(21). A floating gate(23) is formed on the gate insulating layer(22). A conductive sidewall(25) is formed at one side of the floating gate(23). An ONO(Oxide-Nitride-Oxide) layer(29) is formed on a whole face of the substrate(21) including the conductive sidewall(25) and the floating gate(23). A control gate(30) is formed on the ONO layer(29). A source region(26) is formed on a surface of the substrate(21) of the conductive sidewall(25). A drain region(27) is formed on a surface of the substrate(21) corresponding to the source region(26).