METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a passivation defect caused by a void or photoresist remnants on the void and to prevent an operation speed from being delayed by the void and a passivation layer of a high relative dielectric constant, by preventing the void beforehand. CONSTITUTION: An ultimate metal interconnection is formed on a lower layer formed by a series of unit processes. An insulating layer is formed with either one of poly ethyl-tetra ethyl ortho silicate (PE-TEOS) or plasma enhanced oxide(PEOX) to cover the metal interconnection and form a concave portion between the covered metal interconnections. Adhesion between the metal interconnection and the insulating layer is intensified by an annealing process. The concave portion in the insulating layer is filled with a filling material.