发明名称 |
PLASMA DOPING SYSTEM COMPRISING A HOLLOW CATHODE |
摘要 |
A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.
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申请公布号 |
WO0131683(A1) |
申请公布日期 |
2001.05.03 |
申请号 |
WO2000US25803 |
申请日期 |
2000.09.20 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
GOECKNER, MATTHEW, J.;FANG, ZIWEI |
分类号 |
H05H1/46;C23C14/48;H01J37/32;H01J37/34;H01L21/265;(IPC1-7):H01J37/32;C23C16/50 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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