发明名称 PLASMA DOPING SYSTEM COMPRISING A HOLLOW CATHODE
摘要 A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.
申请公布号 WO0131683(A1) 申请公布日期 2001.05.03
申请号 WO2000US25803 申请日期 2000.09.20
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 GOECKNER, MATTHEW, J.;FANG, ZIWEI
分类号 H05H1/46;C23C14/48;H01J37/32;H01J37/34;H01L21/265;(IPC1-7):H01J37/32;C23C16/50 主分类号 H05H1/46
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