| 摘要 |
A semiconductor device, in which diffusion of impurities and boron penetration are prevented, comprising a substrate, a first polycrystalline silicon layer formed on the substrate and comprising large grain polycrystalline silicon with a maximum grain size of more than 200 nm; a second polycrystalline silicon layer formed on the first polycrystalline silicon layer and comprising large grain polycrystalline silicon with a maximum grain size of at least 200 nm; and a metal layer or a metal silicide layer formed on the second polycrystalline silicon layer.
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