| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory is provided to prevent a short-circuit phenomenon of a metal line by removing a stepped portion between a peripheral region and an upper portion of a capacitor. CONSTITUTION: A thick oxide layer, a thin oxide layer, and a nitride layer are deposited on a cell region substrate(100) and a peripheral region substrate(200). The nitride layer, the thin oxide layer, and the thick oxide layer are removed. A polysilicon is deposited on the exposed cell region substrate. A polysilicon is deposited on the nitride layer. The polysilicon is etched partially. An oxide layer(106) and a nitride layer(107) are formed on the nitride layer and the polysilicon of the cell region substrate(100) and the nitride layer of the peripheral region substrate(200). The polysilicon is exposed by etching the oxide layer(106). The nitride layer(107) is etched by using an etch ratio between the oxide layer(106) and the nitride layer(107). A polysilicon(108) is formed on the oxide layer(106) and an etched portion of the nitride layer(107). The polysilicon(108), the nitride layer(107), and the oxide layer(106) are etched partially. One electrode of a capacitor is formed by etching the oxide layer(106) between the polysilicon(108). A dielectric(109) and a polysilicon(110) are deposited on upper portions of the polysilicon(108). The polysilicons(110,108) of the peripheral region substrate(200) are etched.
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