发明名称 Aluminum nitride sintered body, method of producing thereof, electrostatic chuck, susceptor, dummy wafer, clamp ring and particle catcher using the same
摘要 The aluminum nitride sintered body of the invention has a thermal conductivity equivalent to that of a high purity aluminum nitride sintered body and a volume resistivity of 1014 OMEGA.cm or less, and is composed of aluminum nitride phase and yttrium aluminum oxide phase formed at grain boundaries of aluminum nitride phase, where the yttrium aluminum oxide phase is 0.5 to 10 wt % in extremes for aluminum nitride phase, and contains at least one kind of lanthanide element 0.1 to 20 atom % in extremes for yttrium element.
申请公布号 US6225249(B1) 申请公布日期 2001.05.01
申请号 US19990349710 申请日期 1999.07.08
申请人 TOSHIBA CERAMICS CO., LTD. 发明人 FUJITA MITSUHIRO;AONUMA SHINICHIRO;SANO KOUJI;MURAMATSU SHIGEKO
分类号 H05K1/03;C04B35/581;(IPC1-7):C04B35/581 主分类号 H05K1/03
代理机构 代理人
主权项
地址