摘要 |
Disclosed is a semiconductor memory device, which comprises a plurality of circuits using a voltage obtained by boosting an external power source voltage and power source noises produced by operations of these circuits have no influence on other circuits. The semiconductor memory device including a boost circuit comprises a plurality of circuits using boost voltages, for example, a memory cell array, an output circuit and a plurality of boost circuits, each being provided for the corresponding one of these circuits. With such constitution, a problem of noise interference among the circuits using the boost voltages can be removed.
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