发明名称 Semiconductor memory device including boost circuit
摘要 Disclosed is a semiconductor memory device, which comprises a plurality of circuits using a voltage obtained by boosting an external power source voltage and power source noises produced by operations of these circuits have no influence on other circuits. The semiconductor memory device including a boost circuit comprises a plurality of circuits using boost voltages, for example, a memory cell array, an output circuit and a plurality of boost circuits, each being provided for the corresponding one of these circuits. With such constitution, a problem of noise interference among the circuits using the boost voltages can be removed.
申请公布号 US6226206(B1) 申请公布日期 2001.05.01
申请号 US19990265042 申请日期 1999.03.09
申请人 NEC CORPORATION 发明人 MAEDA KAZUNORI
分类号 G11C11/407;G11C5/14;G11C11/4074;G11C11/409;H02M3/07;(IPC1-7):G11C7/00 主分类号 G11C11/407
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