| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method, where a barrier layer for preventing an upper-layer wiring material from diffusing is not interposed between a wiring and a conductive plug. SOLUTION: There are included a first process, where a conductive material is embedded in a through-hole formed at a first inter-layer insulating film to form a conductive plug for connection to a lower-layer wiring, a second process where an upper-layer wiring channel which internally exposes a target region on the conductive plug surface, is formed at a second inter-layer insulating film formed on the conductive plug, a third process, where a first barrier layer is formed over the entire surface of the second inter-layer insulating film comprising the interior of the upper-layer wiring channel, and a fourth process, where a wiring material is embedded in the upper-layer wiring channel to form an upper-layer wiring. Here, a fifth process, where only the first barrier layer formed on the surface of the conductive plug is selectively removed, is provided before the fourth process.
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